Gain bandwidth product ic 10 madc, vce 10 vdc, f 100 mhz ft 100 300 mhz output capacitance vcb 10 vdc, ie 0, f 1. Tme has over 800 employees, who provide expert support at each stage of the ordering process our offer includes 300,000 electronic components from 950 producers since 1990, we have been expanding our operations dynamically and increasing our global potential. Semiconductor components industries, llc, 2004 june, 2004. Semtech, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits. Click here specifications bipolar transistor transistor polarity. H utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values such as maximum ratings, operating condition ranges, or. See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. C unless noted otherwise symbol description 2n5551 unit conditions. It also has decent switching characteristics transition frequency is 100mhz hence can amplify lowlevel signals.
When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads. Home components general components transistors 2n5551 to92 npn high voltage transistor 160v 0. Package specifications do not expand the terms of fairchilds. N stands for ntype material and p stands for ptype material. Transistors peter mathys ecen 1400 transistor families there are two major families of transistors. Plastic package has underwriters laboratory flammability classifications 94v0 metal to silicon rectifier, majority carrier conduction low power loss, high efficiency high current capability, low forward voltage drop high surge capability for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications guardring. Bipolar power transistor selection guide january 2003 table of contents product page general purpose transistors horizontal deflection output transistors product page dpak d2pak sot223 ipak to126 todarlington transistors dpak ipak to126 to220 to220f to3p to3pf switching transistors dpak d2pak to92 to126 to220 to220f to3p to3pf 2. Kst904 1 2n5551 npn silicon transistor descriptions general purpose amplifier high voltage application features high collector breakdown voltage.
Mmbt5551m3 npn high voltage transistor the mmbt5551m3 device is a spin. Small signal high voltage transistor npn small signal high voltage transistor npn features high voltage npn transistor for general purpose and telephony applications mechanical data case. Pc max625mw absolute maximum ratings t 25 a characteristic symbol rating unit collectorbase voltage vcbo 180 v collectoremitter voltage vceo 160 v emitterbase voltage vebo 6. Small signal high voltage transistor npn features high voltage npn transistor for general purpose and telephony applications mechanical data case. Semiconductor data sheets andor specifications can and do vary in different applications and. Ic cross reference cross reference ci stk cross reference ci tda cross reference ci sharp cross reference hitachi audio ic cross reference and circuit applications smd cross reference and equivalent we make every effort to ensure that the material on this site is accurate, however we do not warrant or represent that the information is free. Please consult the most recently issued data sheet before initiating or completing a design. Dec 21, 2017 the 2n5551 is an npn amplifier transistor with an amplification factor hfe of 80 when the collector current is 10ma. Toshiba transistor silicon npn epitaxial type pct process 2sc1815 audio frequency general purpose amplifier applications driver stage amplifier applications high voltage and high current. Npn silicon expitaxial planar transistor for general purpose, high voltage amplifier applications, 2n5551 datasheet, 2n5551 circuit, 2n5551 data sheet. The 2n5551 is an npn amplifier transistor with an amplification factor hfe of 80 when the collector current is 10ma. Base voltage 2n5550 2n5551 vcbo 160 180 vdc emitter.
Bjts have 3 terminals and come in two varieties, as npn and pnp transistors. This device is designed for general purpose high voltage amplifiers and gas discharge display drivers vceo vcbo vebo ic tj, tstg collectorbase voltage emitterbase voltage collector current continuous collectoremitter voltage. Pmbt5551 npn highvoltage transistor dbook, halfpage m3d088. Smt transistor bipolar 48 smt transistor fet 15 smt transistor kits 1 soldering supplies 18 solderless breadboard 21 speakers 6 switches 72. On semiconductor 2n5551 transistors bipolar bjt single parts available at digikey. Every day, we send 5000 shipments and we ensure that they arrive in the shortest time available. Home components smdsmt components transistors mmbt5551 sot23 2n5551 smd npn high voltage transistor g1 marking. Onsemi, alldatasheet, datasheet, datasheet search site for electronic. Due to this feature, the transistor is commonly used for amplification of audio or other low power signals. Vceo160v high current gain applications telephone switching circuit amplifier ordering information ordering number pin assignment package packing lead free plating halogen free 1 2 3 2n5551lx. Absolute maximum ratings ta 25c unless otherwise noted.
C page 2 of 2 any changes of specification will not. Emitter voltage 2n5550 2n5551 vceo 140 160 vdc collector. Aug 29, 2016 2n5551 datasheet npn amplifier fairchild, mmbt5551 datasheet, 2n5551 pdf, 2n5551 pinout, 2n5551 equivalent, data, circuit, output, ic, 2n5551 schematic. The product status of the devices described in this data sheet may have changed since this data sheet was published.
Free packages are available maximum ratings rating symbol value unit collector. Semtech npn silicon expitaxial planar transistor for general purpose, high voltage amplifier applications,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Elektronische bauelemente ss8050 npn silicon general purpose transistor 26oct2009 rev. Page 2 of 3 electrical characteristics t ambient25. Toshiba transistor silicon npn epitaxial type pct process. Vceo 50 v min, ic 150 ma max excellent hfe linearity.
Semiconductor transistor, diode, ic cross reference. It is designed for general purpose high voltage applications and is housed in the sot. B1 1 june 2009 2n5551 mmbt5551 npn general purpose amplifier features this device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Onsemi mplifier transistorsnpn silicon,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Vceo160v high current gain applications telephone switching circuit amplifier ordering information ordering number pin assignment package packing lead free. Preferred device amplifier transistors npn silicon features pb. Aah 20090112 mmbt5401 smd high voltage transistor pnp. Free packages are available maximum ratings rating collector. Bipolar junction transistors bjt and fieldeffect transistorsfet.
H utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values such as. The 2n5551 is an npn amplifier transistor with an amplification factor of 80 when the collector current is 10ma. Suffix y means hfe 180240 in 2n5551 test condition. Compare pricing for on semiconductor 2n5551bu across 18 distributors and discover alternative parts, cad models, technical specifications, datasheets, and more on octopart. Here is an image showing the pin diagram of the this transistor. Please consult the most recently issued document before initiating or completing a design. Semtech, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. W semiconductor components industries, llc, 2004 june, 2004 rev. Product tags other people marked this product with these tags. Free devices maximum ratings rating symbol value unit collector. May 02, 2016 c3209 datasheet pdf npn transistor nec, 2sc3209 datasheet, c3209 pdf, c3209 pinout, c3209 equivalent, c3209 transistor, c3209 schematic, c3209 manual. Absolute maximum ratings ta 25c unless otherwise noted these ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Mmbt5551 g1 smd transistor sot23 2n5551 mmbt5551 sot23 50pcs. Mmbt5551 sot23 2n5551 smd npn high voltage transistor. Details about mmbt5551 g1 smd transistor sot23 2n5551 mmbt5551 sot23 50pcs. It was used for a good number of years and contains thousands of types. Unfollow transistor 2n5551 to stop getting updates on your ebay feed.
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